本論文是用模擬軟體SCAPS建立硒硫化銅銦鎵薄膜太陽能電池(Cu(In,Ga)(Se,S)2)元件模型，並用改變參數數值來探討CIGSS太陽能電池的效能。
本文探討硒化銅銦鎵薄膜(CIGS)經過表面硫化處理後，藉由改變不同硫的比例，來分析對CIGSS太能電池的影響，最後探討使用不同的緩衝層硫氧化鋅(Zn(O,OH,S))和硫化鎘(CdS)以及不同窗層材料摻硼氧化鋅(ZnO:B)和摻鋁氧化鋅(ZnO:Al) 對CIGSS太能電池元件效能的影響。

The simulation software SCAPS is used to construct the device model of Cu(In,Ga)(Se,S)2 and to discuss the performance of Cu(In,Ga)(Se,S)2 solar cells by changing the parameter values.
This article discuss the the impact of absorber layer prepared by sulfurization after selenization , analyze the impact of changing the different sulfur ratio on the Cu(In,Ga)(Se,S)2 solar cell, and finally discuss the use of different buffer layers of zinc sulfide oxide (Zn(O, OH, S)), cadmium sulfide (CdS), and different window layers with boron-doped zinc oxide (ZnO:B) and aluminum-doped zinc oxide (ZnO:Al) on the performance of Cu(In,Ga)(Se,S)2 solar cells.

第一章 緒論 1
1-1. 前言 1
1-2. 太陽能電池種類介紹 2
第二章 太陽能電池原理 5
2-1. 太陽光譜 5
2-2. 光學吸收係數 6
2-3. 硒化銅銦鎵薄膜太陽能電池結構 7
2-1-1. 鈉玻璃(Soda-lime)基板 7
2-1-2. 鉬(Mo)金屬背電極 7
2-1-3. 硒化銅銦鎵吸收層(absorber) 8
2-1-4. 硫化鎘(CdS)緩衝層 8
2-1-5. 透明導電層 8
第三章 硫硒化銅銦鎵太陽能電池基本模型的參數建立 9
3-1. 簡介 9
3-1-1. 硫與鎵含量變化對黃銅礦半導體的能帶寬和電子親和力的影響 9
3-2. 元件模擬參數設定 11
3-2-1. 上電極與背電極 11
3-2-2. 透明導電層:摻硼氧化鋅(ZnO:B) 11
3-2-3. 本質氧化鋅 (i-ZnO) 11
3-2-4. 緩衝層 (Zn(O.OH.S)) 12
3-2-5. 吸收層 (Cu(In1-xGax)(Se1-ySy)2) 13
3-2-6. Cu(In1-xGax)(Se1-ySy)2薄膜的能帶寬和電子親和力 13
3-2-7. 硫硒化鉬 Mo(S,Se) 17
3-3. 參數模擬的結果 21
第四章 不同緩衝層和窗層對硫硒化銅銦鎵太陽能電池的效能影響 25
4-1. 改變緩衝層:硫化鎘(CdS)的模擬參數 25
4-1-1. 緩衝層Zn(O,OH,S)和CdS相互比較 25
4-2. 改變窗層:摻鋁氧化鋅(ZnO:Al)的模擬參數 27
4-2-1. 窗層BZO和AZO相互比較 27
第五章 結論 29
參考文獻 31

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