使用爐管式化學氣相蒸鍍儀(tube furnace chemical vapor deposition, TFCVD)製備出樣品碲的微米與奈米材料。將微米與奈米碲樣品再一次透過爐管式化學氣相蒸鍍儀進行退火動作，期望製備出奈米級二氧化碲，以用來作為電阻式記憶體(resistive random-access memory, RRAM)中金屬氧化物層的樣品。比較退火前與退火後場發射掃描式電子顯微鏡(field-emission scanning electron microscopy, FESEM)、X射線能譜散佈分析儀(energy dispersive spectrometry, EDS)、X射線光電子能譜儀(X-ray photoelectron spectroscopy, XPS)、X射線繞射儀(X-ray diffractometry, XRD)、拉曼光譜儀(Raman spectroscopy)、穿透式電子顯微鏡(transmission electron microscopy, TEM)，來了解樣品形貌與成份結構，將數據相互比對確認樣品在退火前為六方晶系(hexagonal)結構之碲金屬樣品，退火後部分樣品完全轉變為四方晶系(tetragonal)結構之二氧化碲，最後再將碲(Te)與二氧化碲(TeO2)的微米或奈米結構進行電性量測，來判斷在常溫下樣品是否具有電阻轉換特性。我們發現樣品寬度約在95奈米時的二氧化碲具有雙極電阻轉換特性，是一種有辦法成為電阻式記憶體的材料。

The tellurium (Te) mico- and nano-structures were synthesized using tube furnace chemical vapor deposition (TFCVD). Then the mico- and nano-structures are annealed in TFCVD in order to produce the tellurium oxide (TeO2) mico- and nano-structures. The morphology of these Te and TeO2 mico- and nano-structures were studied using field-emission scanning electron microscopy (FESEM). The elemental information and electronic structure were revealed using energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS). The crystal structures were studied using X-ray diffractometry (XRD), Raman spectroscopy, and transmission electron microscopy (TEM). The various as-synthesized Te and TeO2 micro- and nano-structures were investigated with the electrical measurements of IV loops to probe the resistive switching properties at room temperature. We found only the TeO2 nanostructures of ~95 nm wide have the bipolar resistive switching properties, which are very potential to the application in random access memory (RRAM) devices.

摘要 I
Abstract III
圖目錄 VII
表目錄 IX
第一章 導論 1
1.1 電阻式記憶體發展 1
1.2 電阻轉換特性 1
1.3 燈絲理論(filament theory) 2
1.4 研究動機 4
第二章 材料製備方法 5
2.1 爐管式化學氣相蒸鍍儀(TFCVD) 6
2.2 實驗材料 7
2.3 實驗參數與步驟 8
2.3.1 樣品製備 8
2.3.2 樣品退火 9
第三章 實驗數據與分析 11
3.1 退火前樣品分析 11
3.1.1 場發射掃描式電子顯微鏡分析 11
3.1.2 X射線光電子能譜儀分析樣品表面成分 15
3.1.3 X射線繞射儀分析 16
3.2 退火後樣品分析 17
3.2.1 場發射掃描式電子顯微鏡分析 17
3.2.2 X射線能譜散佈分析儀 19
3.2.3 X射線光電子能譜儀 21
3.2.4 X射線繞射儀 22
3.2.5 拉曼光譜儀 28
3.2.6 穿透式電子顯微鏡 30
3.2.7 電性分析 32
第四章 結論 39
參考文獻 41

[1] D. S. Jeong, R. Thomas, R. S. Katiyar, J. F. Scott, H. Kohlstedt, A. Petraru and C. S. Hwang, Emerging memories: resistive switching mechanisms and current status, Rep. Prog. Phys., 75, 076502 (2012).
[2] H.-S. Philip Wong, H.-Y. Lee, S. Yu, Y.-S. Chen, Y. Wu, P.-S. Chen, B. Lee, F. T. Chen, and M.-J. Tsai, Metal-Oxide RRAM, Proc. IEEE, 100, 1951–1970 (2012).
[3] I. Valov and W. D. Lu, Nanoscale electrochemistry using dielectric thin films as solid electrolytes, Nanoscale, 8, 13828–13837 (2016).
[4] J. Shang, W. Xue, Z. Ji, G. Liu, X. Niu, X. Yi, L. Pan, Q. Zhan, X.-H. Xu and R.-W. Li, Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films, Nanoscale, 9, 7037–7046 (2017).
[5] C. Pan, Y. Ji, N. Xiao, F. Hui, K. Tang, Y. Guo, X. Xie, F.M. Puglisi, L. Larcher, E. Miranda, L. Jiang, Y. Shi, I. Valov, P.C. McIntyre, R. Waser, and M. Lanza, Coexistence of grain-boundaries-assisted bipolar and threshold resistive switching in multilayer hexagonal boron nitride, Adv. Funct. Mater., 27, p. 1604811 (2017).
[6] V. Kosyak, Y. Znamenshchykov, A. Cerskus, Y. P. Gnatenko, L. Grase, J. Vecstaudza, A. Medvids, A. Opanasyuk, and G. Mezinskis, Composition dependence of structural and optical properties of Cd1-xZnxTe thick films obtained by the close-spaced sublimation, J. Alloys Compd., 682 543-551 (2016).
[7] A.P. Mirgorodsky, T. Merle-Meĵean, J.-C. Champarnaud, P. Thomas, and B. Frit, Dynamics and structure of TeO2 polymorphs: model treatment of paratellurite and tellurite; Raman scattering evidence for new g- and d-phases, J. Phys. Chem. Solids, 61, 501–509 (2000).
[8] J. J. Yang, D. B. Strukov, and D. R. Stewart, Memristive devices for computing, Nat. Nanotech., 8, 13–24 (2013).
[9] T. Tsuruoka, K. Terabe, T. Hasegawa, and M. Aono, Forming and switching mechanisms of a cation-migration-based oxide resistive memory. Nanotechnology, 21, 425205 (2010).
[10] A. Sawa, Resistive switching in transition metal oxides. Mater. Today, 11, 28–36 (2008).