本研究以高溫熔融搖擺搭配直接淬火(Direct Quench)的方式製備出摻入鉍或鎵的(HgTe)0.55/(PbTe)0.45共晶複合物，摻入鉍或鎵的比例皆為x或y=0.01、0.03、0.05。使用X-ray繞射(XRD)、光學顯微鏡(OM)、場發式掃描式電子顯微鏡(FE-SEM)來分析其成份組成及顯微結構。熱電性質量測包含電阻率、Seebeck係數和熱傳導率隨溫度變化，量測溫度範圍在60～300 K，並計算其熱電優值ZT。
摻入鉍之(HgTe)0.55/(PbTe)0.45共晶複合物在電阻率方面呈現半導體特性；在Seebeck係數方面量x=0.01的樣品有p-type轉n-type的現象，x=0.03、0.05皆為n-type；x=0.05的樣品有最佳的Seebeck係數達到-154 μV/K；在熱傳導率方面皆隨溫度上升而下降；由上述熱電性質計算過後，最佳的熱電優值為x=0.03的樣品，歸因於其最高的Seebeck係數及較低的電阻率，在300 K時有最高的ZT值達到0.13。
摻入鎵之(HgTe)0.55/(PbTe)0.45共晶複合物在電阻率方面呈現金屬特性；在Seebeck係數方面量測溫度範圍內皆為n-type，y=0.05的樣品有最佳的Seebeck係數達到-122 μV/K；熱傳導率方面摻入鎵的樣品熱傳導率隨溫度變化較為平緩，在60 K時熱傳導率最低的為y=0.05的樣品約為8 mW/cm-K左右；由上述熱電性質計算過後，最佳的熱電優值為y=0.01的樣品，歸因於其最低電阻率，及較高的 Seebeck係數，在300 K時有最高的ZT值達到0.06。
由實驗中可發現到摻入鉍和鎵的電阻率雖然差異不大，但摻入鉍之共晶複合物在電阻率方面呈現半導體特性，而摻入鎵之共晶複合物在電阻率方面則呈現金屬特性；由XRD分析可看出鉍的摻入取代了汞和鉛，而鎵則是取代了汞和碲，此一選擇性取代是值得探討的特殊現象。
所有樣品中，以摻入鉍之比例x=0.03的樣品在300 K時有最佳的ZT值0.13，與未摻雜的HgTe/PbTe共晶複合物相比高出許多，代表適當摻入鉍能有效改變載子濃度，提升材料電傳輸特性，增益熱電優值。

In this study, (HgTe)0.55/(PbTe)0.45 eutectic composites incorporated with bismuth or gallium were synthesized using direct quenching method respectively. The composition and microstructure of these eutectic composites were examined by optical microscope, X-ray diffraction and scanning electron microscope. The thermoelectric properties for these eutectic composites were studied by means of thermal and electrical transport measurement in the temperature range between 60 K and 300 K. The temperature dependence of the thermoelectric properties of (HgTe)0.55/(PbTe)0.45 eutectic composites incorporated with bismuth or gallium were discussed.
The resistivity of Bi-incorporated (HgTe)0.55/(PbTe)0.45 eutectic composites decrease with raising temperature, showing semiconducting properties. The seebeck coefficient of the [(HgTe)0.55/(PbTe)0.45]0.99Bi0.01 eutectic composites change from positive to negative value. Another eutectic composites show n-type conducting and the seebeck coefficient of [(HgTe)0.55/(PbTe)0.45]0.95Bi0.05 achieved -154 μV/K at 300 K. The thermal conductivity of these eutectic composites decrease with raising temperature. The [(HgTe)0.55/(PbTe)0.45]0.97Bi0.03 eutectic composite exhibits the maximum ZT=0.13 at 300 K.
The resistivity of Ga-incorporated (HgTe)0.55/(PbTe)0.45 eutectic composites increase with raising temperature, showing metallic properties. All these composites show n-type conducting and the seebeck coefficient of [(HgTe)0.55/(PbTe)0.45]0.95Ga0.05 achieved -122 μV/K at 300 K. The [(HgTe)0.55/(PbTe)0.45]0.95Ga0.05 eutectic composite has the lowest thermal conductivity about 8 mW/cm-K at 300 K. The [(HgTe)0.55/(PbTe)0.45]0.99Ga0.01 eutectic composite has the lowest resistivity and it exhibits the maximum ZT=0.06 at 300 K.
The maximum figure of merit ZT was obtained as 0.13 in the sample [(HgTe)0.55/(PbTe)0.45]0.97Bi0.03 at 300 K, this value is much higher than that of pure HgTe-PbTe eutectic composite.

目錄 I
圖目錄 III
第一章 緒論 1
1-1前言 1
1-2研究動機 2
第二章 理論基礎與文獻回顧 3
2-1 材料基本特性 3
2-1-1 PbTe基本特性[14] 3
2-1-2 HgTe基本特性[15, 16] 4
2-1-3 HgTe-PbTe偽二元相圖[17] 4
2-2 熱電理論 5
2-2-1 Seebeck效應[18] 6
2-2-2 Peltier效應[18] 6
2-2-3 Thomson效應[18] 7
2-3 熱電材料物理性質 8
2-3-1 電阻率 8
2-3-2 Seebeck係數 9
2-3-3 熱傳導現象 10
2-3-3-1 電子對熱傳導的影響 11
2-3-3-2 聲子對熱傳導的影響 11
第三章 實驗方法與步驟 15
3-1 實驗方法 15
3-2 實驗步驟 17
3-2-1 石英管之前處理 17
3-2-2 元素秤重及封管 18
3-2-3 高溫搖擺即直接淬火 20
3-3 樣品製備與量測 22
3-3-1 電阻率樣品製備與量測 22
3-3-2 熱傳導率與Seebeck係數樣品製作及量測 23
3-3-3 熱電量測系統及控制程式 24
3-4 顯微結構與成分分析 27
3-4-1 XRD(X-ray diffractometer) 27
3-4-2 場發射型掃描式電子顯微鏡(FE-SEM) 27
第四章 實驗結果與討論 28
第一部份：摻入鉍之共晶複合物樣品 29
4-1 顯微結構與成分分析 29
4-1-1 XRD分析 29
4-1-2 光學顯微鏡分析 33
4-1-3 電子顯微鏡分析 50
4-2 熱電性質量測分析 62
4-2-1 電阻率 62
4-2-2 Seebeck係數 63
4-2-3 熱傳導率 64
4-2-4 熱電優值ZT 65
第二部份：摻入鎵之共晶複合物樣品 66
4-3 顯微結構與成分分析 66
4-3-1 XRD分析 66
4-3-2 光學顯微鏡分析 70
4-3-3 電子顯微鏡分析 87
4-4 熱電性質量測分析 99
4-4-1 電阻率 99
4-4-2 Seebeck係數 101
4-4-3 熱傳導率 102
4-4-4 熱電優值ZT 105
第五章 結論 106
參考文獻 108

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