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作者:洪靖傑
作者(英文):Jing-Jie Hung
論文名稱:表面品質對太陽電池之影響研究
論文名稱(英文):The Influence of Surface Quality on Solar Cell
指導教授:林楚軒
指導教授(英文):Chu-Hsuan Lin
口試委員:程子桓
王智明
林楚軒
口試委員(英文):Zih-Huan Cheng 
Chih-Ming Wang 
Chu-Hsuan Lin
學位類別:碩士
校院名稱:國立東華大學
系所名稱:光電工程學系
學號:610525010
出版年(民國):107
畢業學年度:106
語文別:中文
論文頁數:48
關鍵詞:蝕刻鈍化層二氧化矽載子復合速率
關鍵詞(英文):passivation layeretchingHNAsurface recombination
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本篇論文研究不同厚度之N型矽基板在不同復合速率下的生命期的關係,根據前人PC1D模擬結果顯示,在表面復合速率夠低的情況下,太陽能電池的效率,會隨著其基板厚度減少而增加。
我們利用濕式蝕刻減少矽基板的厚度,並用硝酸氧化法(NAOS)在矽基板上生成二氧化矽作為鈍化層,再將其進行退火處理,進一步降低復合速率。Lifetime量測結果顯示,用NAOS法生成的氧化層有較高的表面復合速率,會隨著厚度減少而增加,但經過攝氏800度的退火處理後,表面復合速率有顯著的下降,且隨著厚度減少而減少。
最後希望應用在異質接面太陽能電池上,以氧化釩作為載子傳輸層,背面以雷射開洞方式使基板與銀電極有良好接觸。
In this study, we investigate the relationship between the thickness of solar cells and lifetime with different surface recombination conditions. According to the previous PC1D simulation, the efficiency of solar cell could be increased as the thickness decreased with a low surface recombination velocity.
We utilize wet etching to decrease the thickness of the n-type silicon substrate. Nitric acid oxidation of Si method (NAOS) is also used to grow the SiO2 passivation layer. In order to achieve lower surface recombination, the heat treatment has been adopted.
Results of minority carrier lifetime measurement of SiO2 layers prepared with NAOS demonstrate that lifetime will decrease as the thickness becomes thinner. However, after heat treatment, the lifetime behavior shows the opposite trend. The lifetime increases as the thickness decreases.
第一章 緒論...1
1.1前言...1
1.2研究動機...2
1.3論文架構...3
第二章 厚度與太陽能電池原理...5
2.1 太陽能電池原理介紹...5
2.1.1單晶矽太陽能電池...5
2.1.2異質接面太陽能電池...6
2-2 厚度與效率關係...7
2.2.1文獻回顧...7
2.2.2 實驗室學長模擬成果...7
2.3 鈍化介紹...10
第三章 IBC電池蝕刻與效率量測...15
3.1 蝕刻種類...15
3.1.1 乾式蝕刻...15
3.1.2 濕式蝕刻...16
3.1.3 各向同性與各向異性...17
3.2 IBC電池蝕刻...19
3.2.1 IBC太陽能電池...19
3.2.2 實驗過程...20
3.2.3 IBC2電池量測...23
3.2.4 實驗結果...26
3.2.5 IBC鈍化...28
第四章 晶圓蝕刻與生命期量測...31
4.1 少數載子生命期量測...31
4.2 實驗流程...34
4.3 實驗結果與討論...37
4.4氧化釩異質接面太陽能電池...43
4.4.1 預期結果...44
第五章 總結和未來方向...45
參考文獻...46

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9F%BA%E7%9F%BD%E6%B0%A7%E7%83%B7.
[3-9]陳冠宇, "氧化石墨烯之負電荷於PN單晶矽太陽能電池之鈍化應用"國立東華大學光電所碩士論文,2015
[4-1] Taketoshi Matsumoto, Ryo Hirose, Fumio Shibata, Daisuke Ishibashi, Shoji Ogawara, Hikaru Kobayashi, "Nitric acid oxidation of Si method for improvement of crystalline Si solar cell characteristics by surface passivation effect", Solar Energy Materials and Solar Cells, Volume 134, 2015, Pages 298-304, ISSN 0927-0248,
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