本論文主要探討將氧化鉬（MoOX）應用於局部背鈍化太陽能電池（Passivated Emitter and Rear Cell, PERC），希望透過氧化鉬的寬能隙、高功函數等特性來改善太陽能電池的效率。一般矽晶太陽能電池背部會有鈍化層，如氮氧化矽（SiON）或氧化鋁（Al2O3），另外我們實驗室也研究了另一種可能的鈍化材料:氧化石墨烯（Graphehe Oxide, GO）作為鈍化層，然而這些鈍化層不導電，所以一般會用雷射開洞使其上下的矽與金屬得以相接。不過雷射開洞的面積有限，也會造成電阻，所以商用太陽電池是藉由高溫來引起金屬在矽內的擴散，但這樣的後段高溫製程也會造成太陽電池的效率衰退。因此，有文獻指出，可以在矽與金屬間引入氧化鉬，藉由其高功函數來幫助導電，就無需額外的高溫擴散製程。而本實驗室的氧化石墨烯水溶液滴於基板背面，烤乾後的氧化石墨烯本身就有空隙，可讓氧化鉬直接與矽基板接觸而不用再使用雷射，減少了雷射對基板的傷害。我們首先將氧化鉬應用於偵測器上並測量其電流電壓曲線，得知氧化鉬確實能幫助導電，提高響應度。接著取業界所購買的太陽能電池基板，並把氧化鉬沉積於基板背面，再鍍上鋁作為正負電極，即完成太陽能電池，目前背部僅氧化石墨烯的太陽電池，再蓋上氧化鉬後尚未見到效率提升，推測可能氧化鉬厚度過厚影響導電，有待厚度減薄後，來得到類似光偵測器上的優異表現。

This thesis mainly discusses the application of molybdenum oxide (MoOX) to Passived Emitter and Rear Cell (PERC), hoping to improve efficiency through the wide band gap and high work function of MoOX. At present, the passivation layer on silicon solar cell is silicon oxynitride (SiON) or aluminum oxide (Al2O3). In addition, we also research a possible material, Graphene Oxide (GO), as passivation layer. These passivation layers are not conductive, so passivation layers are usually partially opened to make underneath metal contact with silicon directly. However, the laser-opened holes have a limited area and also cause contact resistance. Therefore, diffusion of metal in the silicon by high temperature is needed in commercial solar cells. However, such a high-temperature process will also cause the efficiency degradation. It is possible to introduce MoOX between silicon and metal to help carrier conduction utilizing its property of high work function to avoid high temperature diffusion process. In our laboratory, the aqueous solution of GO was dropped on the back side of the substrate, and there are holes between GO flakes, which allows the MoOX to directly contact with the substrate without using laser firing and reduces the damage of the laser to the silicon. We first used MoOX to the detector and measured the current-voltage curve to confirm that MoOX helps conduct carriers and improve responsivity. Then MoOX was then applied to solar cells. At present, we didn’t demonstrate a higher efficiency on solar cell based on the combination of GO and MoOX. We speculated that the thickness of the molybdenum oxide may be too thick to affect the conductivity, and it may be necessary to obtain a superior performance on a photodetector after the thickness is reduced.

致謝 III
摘要 V
Abstract VII
目錄 IX
圖目錄 X
表目錄 XII
第一章 緒論 1
1.1 前言 1
1.2 研究動機 3
1.3 論文架構 4
第二章 元件及材料介紹 5
2.1 光偵測器 5
2.2 太陽能電池 7
2.2.1 簡介 7
2.2.2 局部背部鈍化太陽能電池（PERC） 10
2.3 氧化鉬（Molybdenum oxide, MoOX, x<3） 13
2.4 氧化石墨烯（Graphene Oxide） 17
2.5 其他材料 18
第三章 應用於矽偵測器 19
3.1 實驗流程 19
3.2 結果探討 21
3.2.1 測量方式 21
3.2.2 測量結果 23
第四章 應用於太陽能電池 31
4.1 實驗流程 31
4.2 結果探討 34
第五章 高速偵測器 37
5.1 簡介 37
5.2 實驗流程 39
5.3 電特性量測 43
第六章 總結與未來方向 45
6.1 總結 45
6.2 未來方向 46
參考文獻 47

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