本實驗利用熱平板金屬氣相沉積儀製備出純錫奈米粒子與二硫化錫兩種材料。以場發射電子顯微鏡觀測表面形貌得知兩者材料分別為零維與二維材料。以X射線能譜散佈分析儀與X射線光電子能譜儀探討樣品之成分，分析到二硫化錫樣品內參雜了一些一硫化錫材料。以X射線繞射儀分析樣品的晶格結構，得知純錫為四方晶系結構，二硫化錫為六方晶系結構。利用拉曼光譜儀與光致螢光並改變溫度探討其光學特性，得知二硫化錫在蒸鍍時間為四十分鐘時，其參雜的一硫化錫明顯減少許多。純錫並非發光材料，而二硫化錫能隙約為2.84 eV，但在光致螢光中卻無訊號，因此得知此材料為間接能隙。在改變溫度下，純錫與二硫化錫相比，二硫化錫因非諧效應與熱膨脹的影響，對溫度的依賴性相對高。最後利用膠帶將二硫化錫進行分層，證實使用膠帶分層得可行性，確認到此材料為凡德瓦力結構的二維材料，利用吸收穿透光譜探討其變化得知，當層數改變時能隙也會改變，為量子侷限效應的緣故導致。

The zero-dimensional (0D) tin nanoparticles (Sn) and two-dimensional (2D) tin disulfide (SnS2) nanomaterials were synthesized using hot-plate metal vapor deposition (HPMVD) technique. The surface morphology of the two materials was observed by field-emission scanning electron microscopy (FESEM). The results show that the zero-dimensional (0D) nanoparticles of tin and two-dimensional (2D) of tin disulfide. The chemical and electronic composition is studied using energy dispersive spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS). The 2D SnS2¬ was occurred with tin sulfide (SnS). The analysis of X-ray diffractometry (XRD) patterns shows that the Sn nanoparticles consist of tetragonal crystal structure and SnS2 is of hexagonal crystals. Raman spectroscopy and photoluminescence (PL) spectroscopy were used to investigate the optical properties of Sn and SnS2. The optical bandgap of the 2D SnS2 found to be 2.84 eV with indirect type bandgap. At different temperatures, as compared with pure Sn, SnS2 show higher dependence on temperature due to anharmonic effect and thermal expansion. The exfoliation of the 2D SnS2 is achieved using a scotch tape. The exfoliation of SnS2 confirms the two-dimensional nature of the SnS2 layers bound by weak Van der Waals force. The absorption spectroscopy of the SnS2 shows that the transmittance is increased with reducing number of layers of SnS2 caused by the quantum confinement effect.

目錄
誌謝……………………………………………………………..I
摘要…………………………………………………………...III
Abstract………………………………………………………..V
目錄…………………………………………………………..VII
圖目錄……………………………………………….………..IX
表目錄………………………………………….……………..XI

第一章 研究動機與文獻回顧……………..………….………1
1.1 研究動機………………………………………………..1
1.2 文獻回顧………………………………………………..2
1.2.1 純錫的介紹與應用…………………………………..2
1.2.2 二硫化錫的介紹與應用……………………………...2
1.2.3 二維材料……………………………………………3
1.2.4 拉曼原理與非簡諧效應……………………………...7
1.2.5 直接能隙與間接能隙………………………………..10
1.2.6 量子侷限效應……………………………………...11
第二章 純錫與二硫化錫的製備與分層…………………….13
2.1 製成儀器…………………………………………..…...13
2.2 純錫奈米材料的製成方式……………………………...15
2.2.1 實驗材料…………………………………………..15
2.2.2 實驗步驟…………………………………………..15
2.2.3 實驗參數…………………………………………..17
2.3 二硫化錫奈米材料製成方式…………………………....17
2.3.1 實驗材料………………………………...………...17
2.3.2 實驗步驟……………………………...…………...18
2.3.3 實驗參數…………………………...……………...19
2.4 材料分層方法………………………………………….20
第三章 測量儀器介紹……………………………………….23
3.1 場發射掃描式電子顯微鏡(field-emission scanning electron
microscopy, FESEM)……………….…………………….23
3.2 X射線能譜散佈分析儀(energy dispersive spectrometry, EDS)…......25
3.3 X射線光電子能譜儀(X-ray photoelectron spectroscopy, XPS)….….26
3.4 X射線繞射儀(X-ray diffractometry, XRD)……….....……..……..28
3.5 拉曼光譜儀(Raman spectrometry)……………….….……….31
3.6 UV-VIS-NIR微型光譜儀………………….………………32
3.7 光致螢光(photoluminescence, PL)…………..……………….33
第四章 數據與分析討論……………………...…………………35
4.1 場發射電子顯微鏡數據與分析………………………………35
4.2 X射線能譜散佈分析儀數據與分析………………...…………40
4.3 X射線光電子能譜儀數據與分析……………………………..42
4.4 X射線繞射儀數據與分析………………...…………………46
4.5 拉曼光譜數據與分析………………………………………48
4.5.1 室溫下的拉曼光譜…………………………………….48
4.5.2 拉曼成像技術………………………..……………….50
4.5.3 變溫拉曼光譜…………………………..…………….53
4.6 UV-VIS-NIR微型光譜儀數據與分析………………………….54
4.7 光致螢光數據與分析………………………………………56
4.8 二硫化錫分層後的分析…………………………………….57
4.8.1 表面形貌分析………………………………………...57
4.8.2 分層後的UV-VIS-NIR微型光譜儀數據與分析…………….58
第五章 結論…………………………………………………….61
參考文獻…………………….………………………………….65

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