本研究以簡易的電化學沉積法於ITO導電玻璃基板製備P-N同質接面氧化亞銅薄膜太陽能電池元件。透過使用氫氧化鋰、氫氧化鈉、氫氧化鉀三種不同的鹼金屬氫氧化物來調配用以沉積P型氧化亞銅薄膜之電解液，希望藉由其鹼金屬離子摻雜於P氧化亞銅薄膜的結構中以改善其導電性，進而提升整體P-N同質接面氧化亞銅薄膜太陽能電池元件的效率。
其中以氫氧化鋰沉積之P型氧化亞銅薄膜具有較低的晶格畸變與較少的晶格缺陷。而受益於P型氧化亞銅薄膜之結晶結構的改善，以氫氧化鋰成長之P-N同質接面氧化亞銅薄膜太陽能電池元件具有最佳的填充因子0.34與元件效率0.43%。根據實驗結果證明，鋰離子摻雜能有效改善P型氧化亞銅薄膜之結晶結構，並且提升整體P-N同質接面氧化亞銅薄膜太陽能電池元件的效率。

In this study, p–n homojunction cuprous oxide thin film solar cells were grown on indium-doped tin-oxide (ITO) substrates by using the electrochemical deposition method. The electrolyte for depositing a p-type cuprous oxide thin film is prepared by using three different alkali metal hydroxides of lithium hydroxide, sodium hydroxide and potassium hydroxide. Desirable to improve the conductivity of the p-type cuprous oxide thin film by alkali metal ions doped. Further improve the efficiency of p–n homojunction cuprous oxide thin film solar cells.
The p-type cuprous oxide thin film deposited by lithium hydroxide has lower lattice distortion and less lattice defects. Benefit from the improvement of the crystal structure of p-type cuprous oxide thin film, the p–n homojunction cuprous oxide thin film solar cells grown with lithium hydroxide has an optimum fill-factor of 0.34 and efficiency of 0.43%. Proof from experimental results, lithium ion doping can effectively improve the crystal structure of p-type cuprous oxide thin film, and improve the efficiency of p–n homojunction cuprous oxide thin film solar cells.

第一章 緒論 1
第二節 實驗原理 5
第三節 實驗方法與步驟 9
第四章 實驗結果與討論 21
第五章 結論 39
第六章 參考文獻 41

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