本研究主軸以過渡金屬氧化物優化太陽能電池為目的，使用的材料有二氧化釩（VO2）、五氧化二釩（V2O5）及三氧化鉬（MoO3），第一種VO2薄膜目標是應用在太陽能組列上的玻璃層，透過其特性製成智慧玻璃，在達到一定溫度時，使紅外光高穿透相變為低穿透，進而達到組列降溫的目的。而本研究中在矽基板上沉積VO2薄膜，利用濺鍍溫度250℃，熱退火溫度450℃，並且利用共濺鍍20W的Mg成功降低相變溫度至51℃。而運用同樣參數在玻璃上，確實得到高溫時紅外線穿透率降低。而在VO2薄膜的製程中，可以透過改變通氧量製成V2O5，因此本研究將V2O5及MoO3當作電洞傳輸層應用在N型矽上，製成太陽能電池與光偵測器，目前在太陽能電池上表現不佳，推測是ITO/金屬與矽之間的接觸電阻過高，導致低效率。而在光偵測器上，則成功比較沉積不同的金屬電極，得到適當的金屬能提升光響應，並且分析不同金屬對於元件中載子的影響。且在HIT結構中應用MoOX的部分，除了上述ITO/電極問題外，在ini結構上也因為少了背部的電子選擇層，使a-Si：H （i）與金屬呈現整流特性，因此在電極部份有待未來再優化。除此之外，HIT結構的光偵測器能透過增厚a-Si：H（i）層增加其對350~600nm之間波段的吸收，也成功增加了響應度。

This thesis optimizes the solar cells with transition metal oxides：VO2、 V2O5 and MoO3. The first intent is to introduce VO2 film into a smart glass for solar cell module. When the VO2 film reaches its transition temperature, the high transmittance of infrared light would become low transmittance, and achieving the purpose of cooling. In this study, the VO2 film was deposited on the silicon substrate with a sputtering temperature of 250℃, thermal annealing temperature of 450℃. The incorporation of 20 W co-sputtering of Mg successfully reduced the transition temperature to 51℃. With the same parameters on the glass, it also has lower infrared transmittance at high temperatures. If the oxygen content could be changed in the process of VO2 film process, V2O5 can be made. In this study, MoO3 and V2O5 as the hole transport layer have been applied to the N-type silicon as solar cells and the photodetectors. Up to now, no satisfied MoO3 and V2O5 solar cells has been demonstrated. Fortunately, different metal electrodes have been applied on MoO3/Si photodetectors, and comprehensive investigation has been done to pursue a suitable metal to enhance the photoresponse and analyze the effect of different metals on the carrier transportation. In addition, the absorption of HIT-structured photodetectors can be increased by thickening the a-Si:H(i) layer, and it successfully increases the responsivity.

摘要 I
Abstract III
目錄 V
圖目錄 VII
表目錄 XIV
第一章 緒論 1
1.1 前言 1
1.2 研究動機 4
1.3 論文架構 6
第二章 過渡金屬氧化物特性介紹 7
2.1 各種釩氧化物之可存在相 7
2.2 二氧化釩（VO2）介紹 9
2.2.1 結構特性 9
2.2.2 光學特性 10
2.2.3 遲滯迴圈與相變溫度 10
2.3 五氧化二釩（V2O5）與三氧化鉬（MoO3）介紹 12
2.3.1 V2O5結構與拉曼光譜介紹 12
2.3.2 MoO3結構介紹 13
2.3.3 過渡金屬氧化物應用於電洞選擇層原理介紹 14
第三章 過渡金屬氧化物薄膜製備 17
3.1 濺鍍沉積不同氧化釩薄膜 17
3.1.1 儀器與實驗製程介紹 17
3.1.2 薄膜濺鍍結果(Ⅰ) 22
3.1.3 薄膜濺鍍結果(Ⅱ) 32
3.2 二氧化釩薄膜光學特性應用 35
第四章 過渡金屬氧化物薄膜應用量測 37
4.1 五氧化二釩與三氧化鉬應用於太陽能電池 37
4.1.1 太陽能電池原理介紹 37
4.1.2 儀器及實驗結構介紹 39
4.1.3 結果與討論－太陽能電池 42
4.2 五氧化二釩與三氧化鉬應用於光偵測器 45
4.2.1 光偵測器與載子穿隧機制原理介紹 45
4.2.2 實驗結構介紹 50
4.2.3 結果與討論－光偵測器 50
第五章 HIT光伏元件 61
5.1 三氧化鉬應用於HIT電池 62
5.2 HIT偵測器介紹 64
5.2.1 實驗結構介紹 65
5.3 HIT偵測器量測與分析 66
第六章 結論與未來方向 71
6.1 結論 71
6.2 未來方向 73
參考文獻 75

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