本研究使用簡易的磷化製程，成功將銦金屬磷化成磷化銦，僅需要將次亞磷酸鈉與銦金屬一同以425 ℃進行熱處理即可。跟市面上的磷化銦晶圓製程相比，所耗費的時間與資源減少的非常之多。透過材料分析，可以發現由此方式製備出的磷化銦，擁有不錯的結晶結構，將其應用於光電化學反應產氫的實驗上，在-0.2 V的電壓下可以產生出的光電流為1.7 mAcm-2，接著將此磷化製程應用於其他結構合成上。

在光電化學產氫上，二氧化鈦因一直都有不錯的成果，但高載子複合速率限制了它的表現。本研究使用水熱法在鈦薄片上成長出二氧化鈦奈米線，並且使用簡易的磷化製程，在二氧化鈦的表面合成出磷酸銦，磷酸銦可以增益二氧化鈦的載子分離效率，減少載子的複合損耗，進而提升其光電化學上的表現。在光電化學反應的量測中，純二氧化鈦米線在1 V的電壓時，只有0.035 mAcm-2，而在放上磷酸銦之後，其光電流達到了0.36 mAcm-2，提升成了原本的10倍。

上述兩實驗結果證實，此簡易且迅速的磷化製程，能確實製備出磷化銦與磷酸銦，並且在光電化學反應上都擁有不錯的表現。

In this study, a facile phosphorization process was used to successfully convert indium metal into indium phosphide. It is only necessary to thermally treat sodium hypophosphite together with indium metal at 425 oC. Compared with the indium phosphide wafer process on the market, the time and resources consumed are greatly reduced. The photocurrent of indium phosphide shows 1.7 mAcm-2 at the potential of 1 V vs Ag/AgCl electrode.

Titanium dioxide is a good photoelectrode, but its performance is limited by high carrier recombination rate. The second work in this study uses the facile phosphorization process to produce indium phosphate on the surface of titanium dioxide nanowire. This heterostructure photoelectrode has 0.36 mAcm-2 of photocurrent at the potential of 1 V vs Ag/AgCl electrode, which is one order of magnitude higher than that of the bare titanium dioxide nanowire.

This work demonstrated that the facile phosphorization process can successfully fabricate indium phosphide and indium phosphate with good photoelectrochemical performance.

致謝 I
摘要 II
Abstract III
目錄 IV
圖目錄 VII
表目錄 X
第一章 緒論 1
第二章 文獻回顧 7
第三章 實驗方法與步驟 17
第四章 結果與討論 39
第五章 結論與未來展望75
第六章 參考文獻 77

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