本研究利用電將輔助式分子束磊晶系統，以液滴磊晶模式，藉由改變三種不同參數系列：成長溫度、氮化時間與液滴沉積時間，在矽基板（111）上成長氮化銦鎵量子點，實驗過程中利用反射式高能量電子繞射儀來做現場的初步分析與判斷成長材料的結晶類型，以電子顯微鏡與原子力顯微鏡分析量子點表面形貌，探討氮化銦鎵量子點的密度、尺寸與銦鎵元素比之影響，以X射線光電子能譜儀分析量子點化學成分，在80K低溫下使用光致發光來測量材料的能隙與銦鎵元素比，藉由以上分析數據來探討三元化合物量子點氮化銦鎵材料的成長機制。
從實驗結果，我們可以發現改變基板成長溫度對氮化銦鎵量子點的各項數據影響最為劇烈，成長溫度較高時，容易使結構有聚集的現象，量子點尺寸差異甚大，密度大幅降低，相分離劇烈；低溫能有效改善相分離的現象，並大幅提高銦金屬濃度比例；而延長氮化時間可以提高氮化銦鎵的品質，液滴沉積時間容易影響量子點的尺寸平均度。
本研究首次使用分子束磊晶系統藉由液滴磊晶模式成功地成長高銦金屬含量的氮化銦鎵量子點，並且以三種不同的參數對成長量子點的影響關係討論，解決了多年以來的氮化銦鎵材料相分離問題，還能有效控制鍵結度品質、量子點尺寸均勻性，最後甚至提出了新的成長方式為之後的氮化銦鎵量子點有更高品質的可能性。

In the report, Indium Gallium Nitride quantum dots was grown on Si (111) by plasma-assisted molecular beam epitaxy (MBE) via droplet epitaxy (DE) technique. This work had three different series of growth parameters: Substrate temperature, nitridation times, the deposition time of metal droplets. During the growth, reflection high energy electron diffraction (RHEED) can monitor the growth of InGaN quantum dots on the surface of Si. After the droplet epitaxy process, secondary electron microscopy and atomic force microscopy were used to observe the surface morphology and density of InGaN dots. The surface chemical composition was analyzed by X-ray photoelectron spectroscopy, and analysis optical properties by photoluminescence. According to the results, we propose the growth mechanism of InGaN quantum dots by droplet epitaxy.
In our results, we found that the density of InGaN quantum dots were influenced strongly by growth temperatures. In the higher growth temperature, nanodots of InGaN had lower density, larger size distribution and phase separation of InGaN. On the other hand, lower-temperature growth can obtain the InGaN nanodots with higher density and Indium ratio. Longer nitridation time can increase quality of InGaN. Droplet deposition time influenced the uniformity of InGaN dots.
This report proposed firstly the higher In composition in InGaN quantum dots via DE growth mode by MBE. According to different growth parameters, the growth mechanism of InGaN dots were investigated. The phase separation phenomenon of InGaN could be overcomed by DE mode for the applications of InGaN quantum dots.

誌謝 i
摘要 iii
Abstract v
目錄 vii
圖目錄 xi
表目錄 xv
第一章 緒論 1
1.1 氮化銦鎵發展歷史 1
1.2 氮化銦鎵材料 2
1.3 奈米材料 4
1.3.1 量子侷限效應（Quantum Confinement） 5
1.3.2 奈米材料成長方法 6
1.4 液滴磊晶模式 10
1.5 退火對量子點結構之影響 14
1.6 分析氮化銦鎵中的銦/鎵濃度比例 18
1.7 研究動機 24
第二章 儀器介紹與分析原理 25
2.1 電漿輔助式分子束磊晶系統 25
2.1.1 真空裝置 25
2.1.2 磊晶裝置 27
2.1.3 分析儀器 28
2.2 場發射掃描電子顯微鏡 30
2.2.1 二次電子成像 31
2.2.2 背向散射電子成像 31
2.3 原子力顯微鏡（Atomic Force Microscope, AFM） 32
2.4 開爾文探針力顯微鏡（Kelvin probe force microscope, KPFM） 33
2.5 X射線光電子能譜儀（X-ray photoelectron spectroscopy, XPS） 34
2.6 光致發光（Photoluminescence, PL） 35
第三章 實驗方式與流程 37
3.1 超高真空環境搭建 37
3.2 基板前處理 37
3.2.1 化學清洗 38
3.2.2 熱清洗 38
3.3 樣品成長流程 38
3.3.1 預先氮化處理 39
3.3.2 液滴沉積 39
3.3.3 後氮 39
3.3.4 退火 40
3.3.5 樣品傳出與分析 40
3.4 粒徑分析方法 40
3.5 實驗流程圖與實驗參數表 41
第四章 數據分析與結果討論 45
4.1 改變成長基板溫度對氮化銦鎵量子點的影響討論 45
4.1.1 利用RHEED觀測氮化銦鎵量子點表面結構成長狀態 45
4.1.2 利用FE-SEM觀測氮化銦鎵量子點表面形貌 47
4.1.3 利用XPS測量氮化銦鎵量子點之原子鍵結與元素組成比例 50
4.1.4 利用AFM與KPFM測量氮化銦鎵量子點之高度與表面功函數 52
4.1.5 利用低溫PL分析氮化銦鎵放光光譜 55
4.1.6 不同成長溫度在結晶過程之討論 57
4.2 改變氮化時間對氮化銦鎵量子點的影響討論 59
4.2.1 利用FE-SEM觀測氮化銦鎵量子點表面型態 59
4.2.2 利用XPS測量氮化銦鎵量子點之原子鍵結與元素組成比例 61
4.2.3 利用AFM與KPFM測量氮化銦鎵量子點之高度與表面功函數 64
4.2.4 利用低溫PL分析氮化銦鎵放光光譜 66
4.2.5 不同氮化時間在結晶過程之討論 68
4.3 改變液滴沉積時間對氮化銦鎵量子點的影響討論 70
4.3.1 利用FE-SEM觀測氮化銦鎵量子點表面形貌 70
4.3.2 利用XPS測量氮化銦鎵量子點之原子鍵結與元素組成比例 73
4.3.3 利用AFM與KPFM測量氮化銦鎵量子點之高度與表面功函數 75
4.3.4 利用低溫PL分析氮化銦鎵放光光譜 77
4.3.5 不同液滴沉積時間在結晶過程之討論 80
第五章 結論 83
參考文獻 84
附錄 90
試片實驗參數與分析編號 90

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