二維材料自 2004 年石墨烯以膠帶重複黏貼撕開方法製備成功後便廣 受關注，其中六方氮化硼因具有較大的能隙（～6.1 eV）、原子級平滑表 面及優異的化學穩定性，被認為在光電與電子元件皆有優異的發展潛 力。在本篇論文中，將以電漿輔助式分子束磊晶系統 （Plasma-assisted molecular beam epitaxy, PA-MBE）成長六方氮化硼 （Hexagonal boron nitride, h-BN）在藍寶石 （c-Sapphire）、二硫化鉬（MoS2/sapphire）和二硫化鎢基板（WS2/sapphire）三種相異的基板上，透過控制各種成長條件來探討基板特性、成長溫度、成長時間等因素對於六方氮化硼的成長影響。

試片成長中會透過高能量反射式電子繞射儀 （Reflection high-energy electron diffraction, RHEED）監控其表面繞射圖示，後以拉曼光譜 （Raman spectrum）測定其結晶品質、原子力顯微鏡 （Atomic force microscope, AFM）和開爾文探針力顯微鏡 （Kelvin probe force microscope, KPFM）分析樣品表面形貌以及表面功函數、X 射線光電子能譜 （x-ray photoelectron spectroscope, XPS）分析原子的電子軌域並繪製異質結構的能帶圖、穿透式電子顯微鏡 （Transmission electronic microscope, TEM）觀察晶體結構及原子或分子堆疊方式、光致發光（Photon luminescence, PL）量測成長的氮化硼對基板材料的發光影響。在經過上述一系列分析後可發現，在不同基板條件下，六方氮化硼材料在二維二硫化鉬上最容易成長，此乃透過二維材料凡德瓦磊晶的成長機制，成長過程基板與薄膜間的晶格不匹配之影響大幅降低，使得有利於氮化硼的生長。另外，二硫化鎢因可受較高溫環境而不至分解，在成長溫度較高的樣品中有較佳的氮化硼成長。

Two-dimensional materials have attracted wide attention since graphene was successfully prepared by repeated sticking and tearing of tapes in 2004. Among 2D materials, hexagonal boron nitride （h-BN） has large band gap （~6.1 eV）, atomic smooth surface and outstanding chemical stability. Therefore, h-BN has excellent potential for the applications in optoelectronics and electronics. In this work, the growth of hexagonal boron nitride was conducted on three different substrates （c-sapphire, 2D-MoS2/sapphire, 2D-WS2/sapphire） by plasma assisted molecular beam epitaxy （PA-MBE）.
During the growth, the surface conditions were monitored by in-situ reflection high energy electron diffraction. After the growth, the samples were characterized by Raman, atomic force microscopy, Kelvin probe force microscopy, photoluminescence, transmission electron microscopy and X-ray photoelectron spectroscopy.

According to the results, the growth of h-BN was easily performed on the 2D-MoS2 surface, which can form h-BN/MoS2 heterostructure. This is because of the mechanism of van der Waals epitaxy. Moreover, h-BN on 2D-WS2 at higher growth temperature showed better crystallinity due to the higher temperature stability of WS2.

目錄
致謝 I
摘要 III
目錄 VII
圖目錄 IX
表目錄 XIII
第一章 緒論 1
1.1 前言 1
1.2 二維材料簡介 3
1.2.1 氮化硼 4
1.2.2 二硫化鉬 6
1.2.3 二硫化鎢 8
1.3 文獻回顧 10
1.3.1 氮化硼成長與分析 10
1.3.2 氮化硼的應用與凡德瓦異質結構 18
1.3.3 凡德瓦磊晶機制 21
1.4 研究動機及目的 22
第二章 儀器應用與基礎原理 23
2.1 電漿輔助式分子束磊晶系統（Plasma-Assisted Molecular Beam Epitaxy, PA-MBE） 23
2.1.1真空腔體與泵浦裝置 24
2.1.2 鍍源及磊晶裝置 25
2.1.3 附屬分析裝置 26
2.2 反射式高能量電子繞射儀 （Reflection High Energy Electronic Diffraction, RHEED） 28
2.3 拉曼光譜 （Raman Spectroscopy） 30
2.4 原子力顯微鏡 （Atomic Force Microscopy, AFM） 32
2.5 開爾文探針力顯微鏡 （Kelvin Probe Force Microscope, KPFM） 34
2.6 X射線光電子能譜儀 （X-ray photoelectron spectroscopy, XPS） 35
2.7 穿透式電子顯微鏡 （Transmission Electronic Microscopy, TEM） 37
2.8 光致發光（Photoluminescence, PL） 39
第三章 實驗流程 41
3.1 機台真空環境建立 41
3.2 基板前處理 43
3.3 氮化硼成長 45
3.3.1 預硼處理 45
3.3.2 氮化處理 45
3.3.3 RHEED影像觀察 46
3.4 樣品分析 47
第四章 實驗結果與討論 49
4.1 實驗參數 49
4.2 氮化硼成長於藍寶石／二硫化鉬基板（Ａ系列） 52
第一部分 不同鍍源溫度 52
第二部分 不同成長時間 66
4.3 氮化硼成長於二硫化鎢基板（Ｂ系列） 78
第一部分 成長於不同基板上 78
第二部分 不同成長溫度 83
第五章 結論 93
第六章 未來工作 95
參考資料 97

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