本實驗以寬能隙金屬氧化物半導體TiO2做為光敏化劑的吸附載體，調整不同TiO2粉末顆粒製作出包含工作層和散射層結構的工作電極，以量子點和染料做為光敏化劑進行共吸附，以此作為染料敏化太陽能電池之光陽極。
以連續離子層吸附反應（SILAR）和化學浴沉積（CBD）法合成量子點於TiO2上，並與染料以共敏化的方式於元件上，實驗中改變CdS量子點的循環層，結果表明為三層時效率4.56 %最佳，為進一步提升染料敏化太陽能電池的效率，故後續再以SILAR法合成2層鈍化層於量子點上，最後成功將元件的效率提升至5.08 %。
成功利用水熱法合成出NiS2粉末，並以不同NiS2粉末濃度的溶液製作出染料敏化太陽能電池之對電極，實驗與Pt進行比較，結果表明以濃度為0.0125 g/ml的溶液製作的對電極最佳，在元件上表現也最為接近Pt對電極。

In this experiment, wide-gap metal oxide semiconductor TiO2 was used as the adsorption carrier of photosensitizer. The different TiO2 powder particles were adjusted to make the working electrodes and scattering layers. The quantum dots and dyes were co-adsorption and they were used as photosensitizers. The above layers form the photo-anodes for dye-sensitized solar cells (DSSCs).
Successive ionic layer adsorption and reaction (SILAR) and chemical bath deposition (CBD) methods were used to synthesize the quantum dots on TiO2. The quantum dots were co-sensitized with dyes. The experimental results showed that the best efficiency of 4.56 % was achieved for the DSSC with three layers. In order to further improve the efficiency of the DSSC, two passivation layers were synthesized on the quantum dots by the SILAR method, and the DSSC efficiency was increased to 5.08%.
The NiS2 powder was successfully synthesized by hydrothermal method. The cathodes of the DSSCs were fabricated with different concentrations of NiS2 powder. When the concentration of NiS2 is 0.0125 g/ml, the DSSC has the best efficiency of the studied DSSCs. The efficiency of the DSSC with NiS2 counter electrode is comparable to that of the DSSC using the Pt counter electrode.

1 第一章 緒論 1
1.1 前言 1
1.2 研究動機 3
2 第二章 文獻回顧 5
2.1 太陽能電池 5
2.2 太陽能電池種類 6
2.3 染料敏化太陽能電池(Dye-sensitized solar cells) 8
2.4 量子點敏化太陽能電池(Quantum-dot sensitized solar cells) 11
2.5 敏化太陽能電池的基本組成架構 12
2.5.1 導電基板 (Conductive substrate) 13
2.5.2 金屬氧化物半導體 (Metal oxide semiconductor) 14
2.5.3 染料光敏劑 (Dye sensitizer) 15
2.5.4 量子點 (Quantum dots) 16
2.5.5 電解液 (Electrolyte) 19
2.5.6 對電極 (Counter electrode) 19
2.6 二硫化鎳 20
3 第三章 實驗步驟與設備 23
3.1 實驗儀器設備 23
3.1.1 超純水系統 (Ultrapure water purification system) 23
3.1.2 加熱磁石攪拌器 (Magnetic stirrer) 23
3.1.3 超音波震盪機 (Ultrasonic cleaner) 24
3.1.4 網印版 (Screen printer) 25
3.1.5 烘箱 (Oven) 25
3.1.6 高溫管型爐 (High temperature tube furnace) 25
3.1.7 電子秤 (Electronic scales) 26
3.1.8 鑽孔機 (Driller) 26
3.1.9 微量滴管 (Micropipette) 27
3.1.10 熱壓機 (Thermo compressor) 28
3.1.11 離心機 (Centrifuge) 28
3.1.12 水熱釜 (Hydrothermal autoclave reactor) 29
3.2 測量儀器設備 30
3.2.1 X光繞射儀 (X-Ray diffraction, XRD) 30
3.2.2 X射線光電子能譜儀 (X-ray photoelectron spectroscopy, XPS) 32
3.2.3 場發射掃描式電子顯微鏡 (Field emission of scanning electron microscope, FE-SEM) 34
3.2.4 太陽電池I-V量測系統 (Solar cell I-V measurement) 36
3.2.5 三維輪廓儀 (3D-surface profiler) 39
3.2.6 電化學工作站 (Electrochemical workstation) 40
3.2.7 紫外-可見光光譜儀 (Ultraviolet–visible spectroscopy, UV-Vis) 46
3.3 實驗藥品 48
3.4 實驗流程 50
3.4.1 工作電極漿料製備 50
3.4.2 散射層漿料製備 51
3.4.3 二硫化鎳(NiS2)製備 52
3.4.4 四氯化鈦前處理緻密層製備 53
3.4.5 工作電極的製備 54
3.4.6 量子點製備 55
3.4.7 染料製備 57
3.4.8 Pt對電極製作 58
3.4.9 NiS2對電極製作 58
3.4.10 電池封裝 59
4 第四章 結果與討論 61
4.1 XRD 61
4.1.1 工作電極與散射層 61
4.1.2 量子點 63
4.1.3 二硫化鎳 63
4.2 XPS 65
4.2.1 量子點 65
4.2.2 二硫化鎳 67
4.3 SEM 70
4.3.1 量子點 70
4.3.2 二硫化鎳 72
4.4 薄膜厚度 74
4.4.1 TiO2塗佈層數 74
4.5 UV-Vis 76
4.5.1 量子點 76
4.6 Tafel測量 78
4.6.1 Pt和不同NiS2粉末濃度的對稱元件Tafel比較 78
4.7 EIS測量 80
4.7.1 Pt和不同NiS2粉末濃度的對稱元件EIS比較 80
4.8 I-V測試 82
4.8.1 Pt對電極與量子點染料共敏化太陽能電池 82
4.8.2 Pt和NiS2粉末濃度的對電極比較 85
5 第五章 結論 87
參考文獻 88

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