在這項研究中，我們成功的利用電鍍法將N型的氧化亞銅薄膜成長在經電化學改質的基板上，並且應用於光電化學分解水產氫。值得注意的是從光電化學反應的結果可以得知，成長在經-1.5 V電壓改質ITO上的氧化亞銅薄膜在0 V (vs Ag/AgCl)時有最高的光電流密度，光電流密度大小為2.1 mAcm-2。與成長在未改質ITO上的氧化亞銅相比，外部量子轉換效率有2倍的提升，推測主要原因來自於氧化亞銅薄膜與基板歐姆接觸獲得改善。

另一部分的研究則是在FTO上利用電化學沉積的方式成長硒化銅薄膜，然後將成長完的薄膜在硒氣氛的環境中熱處理30分鐘以改善結晶結構。利用硒化處理的方式成功的將硒化銅的光電流密度從0.8 mAcm-2提升至2.1 mAcm-2。為了近一步提升光電流，使用浸泡法將二氧化鈦沉積在硒化銅表面，在表面形成異質結構p-n接面。利用此方法成功將光電流密度從2.1 mAcm-2提升至3.0 mAcm-2。

從第一部分的研究結果可以知道基板與材料形成歐姆接觸是一件重要的事，而從第二部分的研究結果可以看出硒化的過程對於硒化物的結晶結構有顯著的影響，並且透過p-n異質接面中的空乏區能有效的提升光電化學反應之反應速率。

In this study, the electrodeposited Cu2O films with n-type conductivity were grown on the electrochemically reduced ITO substrate for photoelectrochemical (PEC) water splitting. Significantly, according to the PEC results, the Cu2O film on the modified ITO under electrochemical reduction of -1.5 V illustrated the highest photocurrent of 2.1 mAcm-2 at a potential of 0 V vs Ag/AgCl reference electrode. Compared to the Cu2O film on the pristine ITO, the biased photon-current efficiency of the Cu2O film on the modified ITO shows a two-fold increase.

On the other study, CuSe were proposed by means of electrochemical deposition route to de deposited on the fluorine-doped tin oxide (FTO) substrate. The as-grown CuSe films were then annealed in Se vapor environment at 100 oC for 30 min to enhance the film crystal structure. Significantly, the selenization process promotes photocurrent density from 0.8 mAcm-2 to 2.1 mAcm-2. In order to further improve photocurrent of CuSe, the n-type TiO2 layer was deposited on the CuSe surface by using the facile immersion method. This novel p-n CuSe/TiO2 hetero-structure shows remarkably increase of photocurrent density from 2.1 mAcm-2 to 3.0 mAcm-2.

From the results of the first part, it can be known that the formation of ohmic contact between the substrate and the photo-active material is important. From the results of the second part, it can be seen that the selenization process has a significant effect on the crystalline structure of copper selenide.

第一章 緒論 　　 1
第二章 理論基礎與研究動機 5
第三章 實驗方法與步驟 12
第四章 實驗結果與討論 26
第五章 結果與未來展望 58
第六章 參考文獻 　 　59

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