HIT結構太陽能電池是矽下世代量產電池很重要的一部分，一般商用的結構以n型矽為基底，結構上下層覆蓋非晶矽，可作為鈍化層減少載子復合，且不影響光子穿透。針對此結構，研究改以p型為基底的nipip-HIT異質接面太陽能電池結構，並增加表層本質非晶矽的厚度，以增強吸收，來讓其作為光偵測器能有與n基座的結構有匹敵的潛力。一開始量測載子生命，與覆蓋ITO完後比較，之後蒸鍍上銀電極，之後量測光暗電流，與EQE。同時此結構有不錯的Speedtime在波長395nm與425nm，透過示波器實驗計算亮暗變換下，電壓高低起伏所需要的時間，可針對特定波長作為一個Photodetector，最後透過EIS分析表面電阻，知道nipip-40i電阻遠小於nipip-40i與speedtime相關。

而另一面則針對不同厚度的a-Si:H本質非晶矽層的厚度研究，找出不同本質非晶矽層厚度EQE頻譜差別，找到其在HIT電池的作用，並其許未來找到a-Si:H本質非晶矽層其最佳厚度，增進HIT-nipip結構效率。

The research topic mainly focus on HIT（Heterojunction with intrinsic Thin layer）solar cell.
Already known that use the n-type silicon layer as the hetero layer substrate ,the upper and lower layers of the structure are amorphous crystal layer, and the amorphous crystal can cover a range of wavelengths and act as passivation at the same time.

Photons still can transmit to N-silicon to transfer to be Solar energy. In this structure, a different nipip-HIT solar cell structure based on p-type is studied, on the research direction. At the beginning , measure lifetime and compared with surface cover by ITO. After the silver electrode is loaded, measure IV curve ，understand the effects behind different thicknesses of amorphous silicon layers At the same time, the structure light and dark transitions are fast, high-sensitive. By this experiment, calculate different voltage delay-time between bright and dark ; and in some specific- wavelength can be a good photo-detector.

Finally we analyze the surface resistance through EIS. The resistance of nipip-40i is much smaller than that of nipip-40i, also related with speed-time. On the other hand, the thickness of a-Si:H amorphous silicon layers with different thicknesses is studied. Find different thicknesses of the amorphous-silicon layers, what is amorphous act in this structure, and different thickness amorphous silicon effect on EQE. Wish the best thickness of amorphous silicon layer will be found in the future. Improve HIT-nipip
Solar cell structure efficiency.

目錄 I
圖目錄 III
致謝 VII
摘要 1
Abstract 2
第一章 3
1.1 前言 3
1.2 研究動機 5
1.3 論文架構 6
第二章 7
2.1 太陽能電池介紹 7
2.2 光電效應原理 10
2.3 光能量和輻照度計算 11
2.4 光能轉換原理-能階基礎理論 13
2.5 商用太陽能板 17
第三章 19
3.1 HIT異質接面電池介紹 19
3.2 HIT電池實驗 24
3.3 載子生命測量儀WCT-1200(Lifetime) 26
3.4 RF-PECVD 電漿輔助化學氣相沉積 29
3.5 FE-SEM 熱場發射式掃描電子顯微鏡 32
3.6 熱蒸鍍機(Evaporator) 34
3.7 波器(oscilloscope): 36
3.8 ARDUINO開發板模組及LED燈: 36
第四章 37
4.1 太陽光模擬器(solar samulator) 37
4.2 EQE 外部量子效率量測 40
4.4 不同厚度a-Si(i):H對EQE影響 44
第五章 49
5.1 光偵測器 49
5.2 SPEEDTIME響應時間 50
5.4 EIS電化學阻抗分析 61
第六章 結論與未來方向 64
結論 64
未來方向 64
參考文獻 65

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