本研究中，我們利用磁控濺鍍法，製備鑭摻雜鋇錫氧薄膜。並以不同溫度退火的方式期望獲得均勻且平整的鈣鈦礦(perovskite)結構鑭鋇錫氧薄膜。製程中，我們使用了藍寶石與白雲母兩種不同的基板進行薄膜的濺鍍。濺鍍完成後分別以600°C、625°C、650°C、675°C的退火溫度進行退火，分析不同退火溫度下的薄膜情況。
　　我們從XRD分析中得知，我們的薄膜有形成鈣鈦礦結晶。且白雲母基板上結晶具有優選方向。在FESEM圖像中顯示650°C以上退火薄膜均勻且連續，但薄膜在白雲母基板675°C退火會發生剝裂破壞試片。最後由AFM分析得知650°C退火6小時後，薄膜有最佳的平整度。

　　In this study, we utilized magnetron sputtering to fabricate lanthanum-doped barium stannate (BaSnO3) thin films. Different annealing temperatures were employed to obtain uniform and flat perovskite structure in the lanthanum barium stannate thin films. During the process, we used two different substrates: sapphire and mica, for thin film deposition. The films were annealed at 600°C, 625°C, 650°C, and 675°C, respectively, to analyze their behavior under various annealing temperatures.
　　From the X-ray diffraction (XRD) analysis, we observed the formation of the perovskite crystal structure in our thin films. The crystallization on the mica substrate exhibited preferred orientation. In the field-emission scanning electron microscopy (FESEM) images, films annealed above 650°C showed uniform and continuous structures, but for films grown on the mica substrate and annealed at 675°C experienced sample delamination and damage. Finally, atomic force microscopy (AFM) analysis revealed that the films annealed at 650°C for 6 hours exhibited the best surface flatness.

摘要 i
Abstract iii
目錄 v
圖目錄 vii
表目錄 xi
第一章、緒論 1
第二章、文獻回顧 3
2.1透明導電氧化物(Transparent Conducting Oxides, TCO) 3
2.2鑭摻雜鋇錫氧(La-doped BaSnO3, LBSO) 3
2.3三維磊晶與二維磊晶 4
第三章、實驗方法 7
3.1實驗規劃 7
3.2實驗儀器 9
3.3實驗樣品製備 10
3.3.1試片製備流程 10
3.3.2磁控濺鍍(Magnetron Sputtering) 10
3.4分析儀器 12
3.4.1 X光繞射儀(XRD) 12
3.4.2場發射掃描式電子顯微鏡(FESEM) 14
3.4.3 X光光電子能譜儀(XPS) 16
3.4.4紫外光-可見光光譜儀(UV-vis) 17
3.4.5原子力顯微鏡(AFM) 19
第四章、結果與討論 21
4.1薄膜結構分析 21
4.2表面形貌分析 44
4.3薄膜能隙分析 50
4.4薄膜元素分析 53
4.5薄膜Mapping元素分析 56
4.6薄膜粗糙度分析 59
4.7 薄膜電性分析 71
第五章、結論 73
第六章、未來工作 75
References 77

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