近年來，無線收發器通常使用正交振幅調變(Quadrature Amplitude Modulation, QAM)來實現無線通信系統中的高數據傳輸速率，並且已經開發並發布了許多短程無線個人區域網 (Wireless Personal Area Network, WPAN)技術。對攜帶型無線設備的日益增長的需求推動了無線技術的快速發展，其中藍牙、Wi-Fi和Zigbee是無線個人區域網中最常用的。在設計這些產品的時候其設計終旨是邁向低成本、低功耗和低電壓的方向努力，以最小化無線個人區域系統晶片。
本論文首先提出了低功耗、低相位雜訊的正交壓控振盪器(Quadrature voltage-controlled oscillator, QVCO)。採用雙混合耦合(Dual-Hybrid-Coupling, DHC) 技術來增加輸出電壓擺幅。應用二次諧波濾波器消除相位雜訊並抑制相位誤差。擬議的DHC-QVCO採用低成本標準的180nm CMOS製程技術實現。振盪頻率在19.8至21.5 GHz ；調整範圍是8.5%；20.6 GHz的頻率偏移1 MHz時其相位雜訊達到-100.1 dBc/Hz。相位誤差和增益誤差分別為4.29度和3.2 dB。核心電路從1.5V電源僅消耗5.15mW的功率。設計的雙混合耦合正交壓控振盪器展示了低功耗、低相位雜訊。
第二是提出新穎的內共振電流注入單平衡混頻器(internal-resonant-current- bleeding, IRCB)，用於藍牙低功耗 (Bluetooth Low Energy, BLE)系統，通過同時使用電流注入(Current-Bleeding , CB)技術和LO開關基底偏壓技術，所提出的內部共振電流注入單平衡混頻器以低功耗實現了高轉換增益和高線性度，此外可以通過添加內部電感器和電容器來消除寄生電容的影響。轉換增益為16.9 dB；三階交調點為4.1-dBm；在1.8V電源下的功耗為0.99 mW。
本論文提出了一種在180nm CMOS製程技術中結合基底電阻結構和基底偏壓技術的低壓低雜訊放大器，使用基底電阻結構和基底偏壓技術不僅可以改善電壓而且可以降低雜訊指數。在2.4GHz其功率增益和雜訊指數分別為13 dB和3.5 dB；操作電壓0.6V其功耗為1.62 mW。

In recent years, transceivers usually use Quadrature Amplitude Modulation (QAM) to achieve high data transfer rate in wireless communication systems. Moreover, numerous short-range wireless personal area network (WPAN) technologies have been developed and published. The increasing demands on portable wireless devices provide a motivation for the development of wireless chip. Among them, Bluetooth, Wi-Fi and Zigbee were the most commonly used in WPAN. To design of these products, compact size, low power, and low voltage were driven towards to minimize the full-integration cost of WPAN system on chip.
A low power and low phase noise quadrature voltage-controlled oscillator (QVCO) was presented for short range radar systems in this dissertation. A dual-hybrid-coupling (DHC) technique is adopted to increase the output voltage swing. The second harmonic filters are applied to eliminate the phase noise as well as to suppress the phase error. The proposed DHC-QVCO was implemented with a low cost standard 180-nm CMOS process technology. The oscillation frequency was operated between 19.8 and 21.5-GHz. The tuning range was 8.5 %. The phase noise achieves -100.1 dBc/Hz at 1-MHz offset from a carrier frequency of 20.6 GHz. The phase error and gain error are 4.29 degree and 3.2 dB, respectively. The core circuit consumes only 5.15 mW from a power supply of 1.5 V. The designed DHC-QVCO has demonstrated the advantages of low power, low phase noise, and wide tuning range for K-band applications.
In this dissertation, a novel internal-resonant-current-bleeding (IRCB) structure for mixer was presented for application in Bluetooth Low Energy (BLE) systems. By using both a current-bleeding (CB) technique and an LO switching body-biased method, the proposed internal-resonant-current-bleeding structure for mixer achieves high conversion gain and high linearity with low power consumption. Moreover, the effects of parasitic capacitances can be cancelled by adding internal inductors and capacitors. The conversion gain of the differential intermediate frequency ports are 16.9 dB. The input third-order intercept point is 4.1 dBm. The power consumption is 0.99 mW with 1.8 V supply.
A low voltage body-resistor-body-bias (BRBB) low noise amplifier incorporates with tsmc 180-nm CMOS process technology was proposed. Using body-resistor structure and body-bias technology not only was adopted to improve the supply voltage, but also to lower the NF. The power gain and NF were and 13 dB and 3.5 dB at 2.4GHz, respectively. The power consumption was 1.62-mW from a power supply 0.6 V supply.

Chapter 1 Background and Motivations 1
1.1 Motivation 1
1.2 Quadrature amplitude modulation 3
1.3 Bluetooth Low Energy Receiver 4
Chapter 2 K-Band Low Power Dual-Hybrid-Coupling Quadrature Voltage-Controlled Oscillator 15
2.1 Dual-Hybrid-Coupling QVCO Design 17
2.1.1 Dual-Hybrid-Coupling Path 19
2.1.2 The Second Harmonic Filter 25
2.2 Simulated and Measured Results 26
2.3 Summary 37
Chapter 3 A Sub-mW Single-balanced Mixer for Bluetooth Low Energy Systems 39
3.1 Proposed High Gain High Linearity Mixer 42
3.1.1 Internal-Resonant-Current-Bleeding Structure 43
3.1.2 LO Switching Body-Biased Method 48
3.2 Simulated and Measured Results 50
3.3 Summary 58
Chapter 4 Low Voltage Body-Resistor-Body-Bias Low Noise Amplifier for Bluetooth Low Energy Systems 59
4.1 Proposed Low-Voltage LNA Design 59
4.1.1 Body-Resistor Structure 61
4.1.2 Body-Bias Technology 63
4.1.3 Noise Analysis 65
4.2 Simulated and Measured Results 75
4.3 Summary 83
Chapter 5 Conclusion 85
REFERENCES 87

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